DocumentCode
2095418
Title
Reformulation of macroscopic transport models based on the moments of the scattering integral [semiconductor device modeling applications]
Author
Grasser, Tibor ; Kosina, Hans ; Selberherr, Siegfried
Author_Institution
Inst. for Microelectron., Vienna, Austria
fYear
2003
fDate
3-5 Sept. 2003
Firstpage
63
Lastpage
66
Abstract
We present a formulation of non-parabolic macroscopic transport models which avoids the commonly used relaxation time approximation by using an expansion of the scattering integral into the odd moments of the distribution function. The parameters of this expansion and the other closure relations are directly calculated via analytical models of the distribution function. We compare models of order four and six to demonstrate the substantially improved accuracy of the six moments description over the conventional four moments energy-transport formalism.
Keywords
Boltzmann equation; carrier mobility; hot carriers; scattering; semiconductor device models; Boltzmann equation; closure relations; distribution function; energy transport; highly downscaled semiconductor devices; hot-carrier effects; nonparabolic macroscopic transport models; scattering integral moments; Analytical models; Dispersion; Distribution functions; Equations; Laboratories; Microelectronics; Moment methods; Scattering; Semiconductor devices; Telephony;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7826-1
Type
conf
DOI
10.1109/SISPAD.2003.1233638
Filename
1233638
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