Title :
Reformulation of macroscopic transport models based on the moments of the scattering integral [semiconductor device modeling applications]
Author :
Grasser, Tibor ; Kosina, Hans ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., Vienna, Austria
Abstract :
We present a formulation of non-parabolic macroscopic transport models which avoids the commonly used relaxation time approximation by using an expansion of the scattering integral into the odd moments of the distribution function. The parameters of this expansion and the other closure relations are directly calculated via analytical models of the distribution function. We compare models of order four and six to demonstrate the substantially improved accuracy of the six moments description over the conventional four moments energy-transport formalism.
Keywords :
Boltzmann equation; carrier mobility; hot carriers; scattering; semiconductor device models; Boltzmann equation; closure relations; distribution function; energy transport; highly downscaled semiconductor devices; hot-carrier effects; nonparabolic macroscopic transport models; scattering integral moments; Analytical models; Dispersion; Distribution functions; Equations; Laboratories; Microelectronics; Moment methods; Scattering; Semiconductor devices; Telephony;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
DOI :
10.1109/SISPAD.2003.1233638