• DocumentCode
    2095418
  • Title

    Reformulation of macroscopic transport models based on the moments of the scattering integral [semiconductor device modeling applications]

  • Author

    Grasser, Tibor ; Kosina, Hans ; Selberherr, Siegfried

  • Author_Institution
    Inst. for Microelectron., Vienna, Austria
  • fYear
    2003
  • fDate
    3-5 Sept. 2003
  • Firstpage
    63
  • Lastpage
    66
  • Abstract
    We present a formulation of non-parabolic macroscopic transport models which avoids the commonly used relaxation time approximation by using an expansion of the scattering integral into the odd moments of the distribution function. The parameters of this expansion and the other closure relations are directly calculated via analytical models of the distribution function. We compare models of order four and six to demonstrate the substantially improved accuracy of the six moments description over the conventional four moments energy-transport formalism.
  • Keywords
    Boltzmann equation; carrier mobility; hot carriers; scattering; semiconductor device models; Boltzmann equation; closure relations; distribution function; energy transport; highly downscaled semiconductor devices; hot-carrier effects; nonparabolic macroscopic transport models; scattering integral moments; Analytical models; Dispersion; Distribution functions; Equations; Laboratories; Microelectronics; Moment methods; Scattering; Semiconductor devices; Telephony;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
  • Conference_Location
    Boston, MA, USA
  • Print_ISBN
    0-7803-7826-1
  • Type

    conf

  • DOI
    10.1109/SISPAD.2003.1233638
  • Filename
    1233638