Title :
Hydrodynamic simulation of RF noise in deep-submicron MOSFETs
Author :
Oh, Tae-young ; Jungemann, Christoph ; Dutton, Robert W.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
A noise model for MOSFETs based on analytical microscopic noise sources has been developed and noise simulations based on the hydrodynamic model have been performed. The drain and gate excess noise parameters and correlation coefficient are extracted and the reasons for noise parameter dependence on the channel length are explained.
Keywords :
MOSFET; semiconductor device models; semiconductor device noise; MOSFETs; analytical microscopic noise sources; channel length; correlation coefficient; excess noise parameters; hydrodynamic model; noise model; Circuit noise; Electrodes; High definition video; Hydrodynamics; Impedance; MOSFETs; Microscopy; Radio frequency; Semiconductor device modeling; Transfer functions;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
DOI :
10.1109/SISPAD.2003.1233644
