• DocumentCode
    2095653
  • Title

    Random dopant fluctuation modelling with the impedance field method

  • Author

    Wettstein, Andreas ; Penzin, Oleg ; Lyumkis, Eugeny ; Fichtner, Wolfgang

  • Author_Institution
    ISE Integrated Syst. Eng., Zurich, Switzerland
  • fYear
    2003
  • fDate
    3-5 Sept. 2003
  • Firstpage
    91
  • Lastpage
    94
  • Abstract
    We discuss an approach for the modelling of random dopant fluctuations based on the impedance field method that has been recently integrated into DESSIS. The method is easy to use and orders of magnitudes more efficient than the statistical method.
  • Keywords
    MOSFET; semiconductor device models; semiconductor device noise; DESSIS; MOSFET; impedance field method; random dopant fluctuation modelling; Doping; Electrons; Equations; Fluctuations; Impedance; Microscopy; Semiconductor process modeling; Statistical analysis; Systems engineering and theory; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
  • Conference_Location
    Boston, MA, USA
  • Print_ISBN
    0-7803-7826-1
  • Type

    conf

  • DOI
    10.1109/SISPAD.2003.1233645
  • Filename
    1233645
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2095653