Title :
Random dopant fluctuation modelling with the impedance field method
Author :
Wettstein, Andreas ; Penzin, Oleg ; Lyumkis, Eugeny ; Fichtner, Wolfgang
Author_Institution :
ISE Integrated Syst. Eng., Zurich, Switzerland
Abstract :
We discuss an approach for the modelling of random dopant fluctuations based on the impedance field method that has been recently integrated into DESSIS. The method is easy to use and orders of magnitudes more efficient than the statistical method.
Keywords :
MOSFET; semiconductor device models; semiconductor device noise; DESSIS; MOSFET; impedance field method; random dopant fluctuation modelling; Doping; Electrons; Equations; Fluctuations; Impedance; Microscopy; Semiconductor process modeling; Statistical analysis; Systems engineering and theory; Temperature;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
DOI :
10.1109/SISPAD.2003.1233645
