Analysis of fluctuations in ultra-small semiconductor devices

Author

Andrei, P. ; Mayergoyz, I.D.

Author_Institution

ECE Dept., Maryland Univ., College Park, MD, USA

fYear

2003

fDate

3-5 Sept. 2003

Firstpage

95

Lastpage

98

Abstract

A technique for the analysis of fluctuations in ultra small semiconductor devices is presented. This technique is applied to the computation fluctuations of threshold voltages and terminal characteristics of MOSFET devices due to the random doping fluctuations and oxide roughness. It is based on the linearization of transport equations with respect to the fluctuating quantities. This approach completely avoids computations for many device realizations and, therefore, it is computationally much more efficient than Monte-Carlo techniques.

Keywords

MOSFET; semiconductor device models; semiconductor device noise; MOSFET; fluctuations; oxide roughness; random doping fluctuations; terminal characteristics; threshold voltages; transport equations; ultra-small semiconductor devices; Charge carrier processes; Computational modeling; Equations; Fluctuations; MOSFET circuits; Semiconductor device doping; Semiconductor devices; Statistical analysis; Statistics; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7826-1

Type

conf

DOI

10.1109/SISPAD.2003.1233646

Filename

1233646