Title :
Analysis of fluctuations in ultra-small semiconductor devices
Author :
Andrei, P. ; Mayergoyz, I.D.
Author_Institution :
ECE Dept., Maryland Univ., College Park, MD, USA
Abstract :
A technique for the analysis of fluctuations in ultra small semiconductor devices is presented. This technique is applied to the computation fluctuations of threshold voltages and terminal characteristics of MOSFET devices due to the random doping fluctuations and oxide roughness. It is based on the linearization of transport equations with respect to the fluctuating quantities. This approach completely avoids computations for many device realizations and, therefore, it is computationally much more efficient than Monte-Carlo techniques.
Keywords :
MOSFET; semiconductor device models; semiconductor device noise; MOSFET; fluctuations; oxide roughness; random doping fluctuations; terminal characteristics; threshold voltages; transport equations; ultra-small semiconductor devices; Charge carrier processes; Computational modeling; Equations; Fluctuations; MOSFET circuits; Semiconductor device doping; Semiconductor devices; Statistical analysis; Statistics; Threshold voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
DOI :
10.1109/SISPAD.2003.1233646
