Title :
Ultra low noise cooled S-band amplifier
Author :
Becerra, Alejandro ; Sierra, Manuel ; Gallego, Juan Daniel
Author_Institution :
Universidad Politécnica de Madrid. E.T.S.I. Telecomunicación. Ciudad universitaria. 28040 Madrid. Spain TEL. 341-3367360, FAX 341-5432002
Abstract :
The design, fabrication and measurement of a HEMT´s, ultra-low noise, microwave, cryogenically-coolable amplifier is described. The design band covers from 2.1 to 2.5 Ghz and average noise temperature under 2.5k and gain over 25 dB have been measured for a two stage amplifier when cooled under 12.5k. Microwave Design System from HP and Pospieszalski HEMT´s noise model have been used to do the design and excellent agreement has been verified between theoretical model and measured parameters. The amplifier has been done to work as an RF fist stage of a radio-astronomy receiver.
Keywords :
Fabrication; Gain measurement; HEMTs; Low-noise amplifiers; Microwave amplifiers; Microwave measurements; Noise measurement; Radio frequency; Radiofrequency amplifiers; Temperature;
Conference_Titel :
Microwave Conference, 1993. 23rd European
Conference_Location :
Madrid, Spain
DOI :
10.1109/EUMA.1993.336779
