Title :
Error estimated driven anisotropic mesh refinement for three-dimensional diffusion simulation
Author :
Wessner, Wilfried ; Heitzinger, Clemens ; Hössinger, Andreas ; Selberherr, Siegfried
Author_Institution :
Inst. fur Microelectron., Technische Univ. Wien, Austria
Abstract :
We present a computational method for locally adapted conformal anisotropic tetrahedral mesh refinement. The element size is determined by an anisotropy function which is governed by an error estimation driven ruler according to an adjustable maximum error. Anisotropic structures are taken into account to reduce the amount of elements compared to strict isotropic refinement. The spatial resolution in three-dimensional unstructured tetrahedral meshes for diffusion simulation can be dynamically increased.
Keywords :
diffusion; semiconductor device models; semiconductor process modelling; anisotropy function; computational method; conformal anisotropic tetrahedral mesh refinement; diffusion simulation; error estimation driven ruler; three-dimensional unstructured tetrahedral meshes; Anisotropic magnetoresistance; Computational modeling; Error analysis; Extraterrestrial measurements; Microelectronics; Physics; Refining; Shape control; Spatial resolution; Telephony;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
DOI :
10.1109/SISPAD.2003.1233649
