Error estimated driven anisotropic mesh refinement for three-dimensional diffusion simulation

Author

Wessner, Wilfried ; Heitzinger, Clemens ; Hössinger, Andreas ; Selberherr, Siegfried

Author_Institution

Inst. fur Microelectron., Technische Univ. Wien, Austria

fYear

2003

fDate

3-5 Sept. 2003

Firstpage

109

Lastpage

112

Abstract

We present a computational method for locally adapted conformal anisotropic tetrahedral mesh refinement. The element size is determined by an anisotropy function which is governed by an error estimation driven ruler according to an adjustable maximum error. Anisotropic structures are taken into account to reduce the amount of elements compared to strict isotropic refinement. The spatial resolution in three-dimensional unstructured tetrahedral meshes for diffusion simulation can be dynamically increased.

Keywords

diffusion; semiconductor device models; semiconductor process modelling; anisotropy function; computational method; conformal anisotropic tetrahedral mesh refinement; diffusion simulation; error estimation driven ruler; three-dimensional unstructured tetrahedral meshes; Anisotropic magnetoresistance; Computational modeling; Error analysis; Extraterrestrial measurements; Microelectronics; Physics; Refining; Shape control; Spatial resolution; Telephony;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7826-1

Type

conf

DOI

10.1109/SISPAD.2003.1233649

Filename

1233649