• DocumentCode
    2095919
  • Title

    Characterization of Zener-tunneling drain leakage current in high-dose halo implants

  • Author

    Choi, Chang-Hoon ; Yang, Shyh-Horng ; Pollack, Gordon ; Ekbote, Shashank ; Chidambaram, PR ; Johnson, Scott ; Machala, Chuck ; Dutton, Robert W.

  • Author_Institution
    Center for Integrated Syst., Stanford Univ., CA, USA
  • fYear
    2003
  • fDate
    3-5 Sept. 2003
  • Firstpage
    133
  • Lastpage
    136
  • Abstract
    Degraded junction leakage current in scaled MOSFETs due to enhanced band-to-band tunneling (i.e. local Zener effect) is characterized based on a modified band-to-band tunneling model. To suppress the severe drain leakage current in the presence of high-dose halo implants, the impact of implant conditions on drain leakage current is estimated based on implant induced damage (point defect) profiles.
  • Keywords
    MOSFET; Zener effect; ion implantation; leakage currents; semiconductor device models; semiconductor doping; tunnelling; MOSFETs; band-to-band tunneling; drain leakage current; high-dose halo implants; implant induced damage; local Zener effect; modified band-to-band tunneling model; point defect profiles; CMOS technology; Current measurement; Degradation; Electronic mail; Electrons; Implants; Instruments; Leakage current; MOSFETs; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
  • Conference_Location
    Boston, MA, USA
  • Print_ISBN
    0-7803-7826-1
  • Type

    conf

  • DOI
    10.1109/SISPAD.2003.1233655
  • Filename
    1233655
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2095919