Title :
GaAs based gratingless wavelength tunable semiconductor laser
Author :
Wenxiong Wei ; Lei Wang ; Jian-Jun He
Author_Institution :
Dept. of Opt. Eng., Zhejiang Univ., Hangzhou, China
Abstract :
We report a simple and compact wavelength switchable laser based on GaAs without grating and epitaxial regrowth. Single-electrode controlled wavelength switching over 30 channels with channel spacing of 0.4nm is achieved, with a SMSR around 30dB. The center wavelength is 877nm, suitable for biological detection.
Keywords :
III-V semiconductors; aluminium compounds; biological techniques; channel spacing; gallium arsenide; laser beam applications; laser tuning; optical switches; semiconductor lasers; AlGaAs-GaAs; SMSR; biological detection; channel spacing; gratingless wavelength tunable semiconductor laser; single-electrode controlled wavelength switching; wavelength 877 nm;
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-6274-0
