Title :
Simulation of surface engineering for ultra shallow junction formation of PMOS for the 90nm CMOS technology node and beyond
Author :
Bonnouvrier, Jérôme ; Lenoble, Damien ; Robilliart, Etienne ; Schwartzmann, Thierry ; Jaouen, Hervé
Author_Institution :
Central R&D, STMicroelectronics, Crolles, France
Abstract :
Since the junctions in the most advanced CMOS devices are thinner and thinner, the influence of the surface of silicon is thus becoming significant on dopant diffusion. In this paper, based on experimental data, a methodology for calibration is proposed, taking this effect of surface into account. SIMS profiles are accurately fitted by simulation using a simple model of recombination of interstitials; the phenomenon of POED is well reproduced and validated by TCAD ID simulations. Then, the impact of POED on the PMOS performances is quantified by anticipation with 2D TCAD simulations.
Keywords :
CMOS integrated circuits; calibration; diffusion; elemental semiconductors; interstitials; secondary ion mass spectra; semiconductor process modelling; silicon; surface treatment; technology CAD (electronics); 2D TCAD simulations; 90 nm; CMOS technology node; PMOS; SIMS profiles; Si; TCAD 1D simulations; calibration; dopant diffusion; interstitials; recombination; silicon; surface engineering; ultra shallow junction formation; Annealing; Boron; CMOS technology; Calibration; Oxidation; Research and development; Semiconductor device modeling; Semiconductor process modeling; Silicon; Surface engineering;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
DOI :
10.1109/SISPAD.2003.1233660
