Title :
Modeling the effect of source/drain sidewall spacer process on boron ultra shallow junctions
Author :
Chakravarthi, S. ; Kohli, P. ; Chidambaram, P.R. ; Bu, H. ; Jain, A. ; Hornung, B. ; Machala, C.F.
Author_Institution :
Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA
Abstract :
A novel model is developed to explain the effect of the source/drain sidewall spacer process on boron drain extension formation. A diffusion model for hydrogen in the source/drain sidewall spacer is developed and combined with a model for boron diffusion in oxides. The model is first calibrated to hydrogen out-diffusion data from Nuclear Reaction Analysis (NRA) and then to boron diffusion data from Secondary Ion Mass Spectroscopy (SIMS). Seemingly anomalous changes in boron junction depths with variation in sidewall spacer deposition conditions are explained by this model. The model is applied to TCAD process/device simulations to understand the effect of sidewall spacer on CMOS device performance.
Keywords :
CMOS integrated circuits; boron; diffusion; elemental semiconductors; hydrogen; integrated circuit modelling; nuclear chemical analysis; secondary ion mass spectra; semiconductor doping; semiconductor junctions; semiconductor process modelling; silicon; technology CAD (electronics); CMOS device performance; SIMS; Si:H,B; TCAD; boron diffusion; boron drain extension formation; boron junction depths; boron ultra shallow junctions; device simulations; diffusion model; hydrogen; hydrogen out-diffusion; model; nuclear reaction analysis; oxides; secondary ion mass spectroscopy; sidewall spacer; source/drain sidewall spacer process; Annealing; Boron; Hydrogen; Instruments; Mass spectroscopy; Semiconductor device modeling; Silicon; Space technology; Telephony; Temperature;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
DOI :
10.1109/SISPAD.2003.1233661
