Theory and design of field-effect carbon nanotube transistors

Author

Pennington, Gary ; Goldsman, Neil

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Maryland, College Park, MD, USA

fYear

2003

fDate

3-5 Sept. 2003

Firstpage

167

Lastpage

170

Abstract

In this work we study the effects of the application of an electric field perpendicular to the axis of a Carbon nanotube. We find that such a field acts to lower the bandgap and alter the wavefunctions around the circumference of the tube. We simulate the quantum transport properties of a resonant-tunneling FET as an application of these effects using the Wigner-function formalism. The results of our theoretical model indicate that the current in this device can be effectively manipulated by the gate potential.

Keywords

carbon nanotubes; energy gap; field effect transistors; nanotube devices; quantum interference phenomena; resonant tunnelling transistors; semiconductor device models; C; Wigner function formalism; electric field; field-effect carbon nanotube transistors; gate potential; quantum transport; resonant-tunneling FET; wavefunctions; CNTFETs; Carbon nanotubes; Educational institutions; Effective mass; Electrons; Energy states; FETs; Photonic band gap; Resonant tunneling devices; Semiconductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7826-1

Type

conf

DOI

10.1109/SISPAD.2003.1233663

Filename

1233663