DocumentCode
2096166
Title
Low loss silicon nanowire waveguide fabricated with 0.13µm CMOS technology
Author
Zhen Sheng ; Chao Qiu ; Hao Li ; Le Li ; Pang, Ai-Chun ; Aimin Wu ; Xi Wang ; Shichang Zou ; Fuwan Gan
Author_Institution
State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
fYear
2012
fDate
7-10 Nov. 2012
Firstpage
1
Lastpage
3
Abstract
Silicon nanowire waveguides are fabricated on silicon-on-insulator (SOI) wafers with 0.13 μm CMOS technology. Propagation losses of 2.4 dB/cm and 0.59 dB/cm are obtained for TE and TM modes, respectively, for the 500 nm × 220 nm channel waveguide.
Keywords
CMOS integrated circuits; integrated optics; nanofabrication; nanophotonics; nanowires; optical fabrication; optical losses; optical waveguides; silicon; silicon-on-insulator; CMOS technology; SOI; Si; TE modes; TM modes; channel waveguide; low loss silicon nanowire waveguide; optical fabrication; propagation losses; silicon-on-insulator wafers; size 0.13 mum; size 220 nm; size 500 nm;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location
Guangzhou
ISSN
2162-108X
Print_ISBN
978-1-4673-6274-0
Type
conf
Filename
6510891
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