DocumentCode :
2096166
Title :
Low loss silicon nanowire waveguide fabricated with 0.13µm CMOS technology
Author :
Zhen Sheng ; Chao Qiu ; Hao Li ; Le Li ; Pang, Ai-Chun ; Aimin Wu ; Xi Wang ; Shichang Zou ; Fuwan Gan
Author_Institution :
State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
fYear :
2012
fDate :
7-10 Nov. 2012
Firstpage :
1
Lastpage :
3
Abstract :
Silicon nanowire waveguides are fabricated on silicon-on-insulator (SOI) wafers with 0.13 μm CMOS technology. Propagation losses of 2.4 dB/cm and 0.59 dB/cm are obtained for TE and TM modes, respectively, for the 500 nm × 220 nm channel waveguide.
Keywords :
CMOS integrated circuits; integrated optics; nanofabrication; nanophotonics; nanowires; optical fabrication; optical losses; optical waveguides; silicon; silicon-on-insulator; CMOS technology; SOI; Si; TE modes; TM modes; channel waveguide; low loss silicon nanowire waveguide; optical fabrication; propagation losses; silicon-on-insulator wafers; size 0.13 mum; size 220 nm; size 500 nm;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
ISSN :
2162-108X
Print_ISBN :
978-1-4673-6274-0
Type :
conf
Filename :
6510891
Link To Document :
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