Title :
Accurate transport modeling with 2D dopant profile effect in L/sub eff/ /spl sim/ 20 nm MOSFETs via inverse modeling
Author :
Tanaka, Takuji ; Kanata, Hiroyuki ; Tagawa, Yukio ; Satoh, Shigeo ; Sugii, Toshihiro
Author_Institution :
Fujitsu Ltd., Akiruno, Japan
Abstract :
To accurately consider 2D dopant profile effect, we have studied transport modeling by comparing nMOSFETs with indium or boron pocket implant. Our inverse modeling has successfully extracted their features of dopant profiles and DIBL effects. It has enabled us to evaluate that the generalized hydrodynamic model is highly reliable even in smaller MOSFETs down to L/sub eff/ /spl sim/ 20 nm.
Keywords :
MOSFET; doping profiles; semiconductor device models; semiconductor doping; 20 nm; 2D dopant profile effect; DIBL effects; MOSFETs; accurate transport modeling; dopant profiles; generalized hydrodynamic model; inverse modeling; Boron; DVD; Digital video broadcasting; FETs; Hydrodynamics; Implants; Indium; Inverse problems; MOSFETs; Semiconductor process modeling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
DOI :
10.1109/SISPAD.2003.1233667
