DocumentCode
2096261
Title
Accurate transport modeling with 2D dopant profile effect in L/sub eff/ /spl sim/ 20 nm MOSFETs via inverse modeling
Author
Tanaka, Takuji ; Kanata, Hiroyuki ; Tagawa, Yukio ; Satoh, Shigeo ; Sugii, Toshihiro
Author_Institution
Fujitsu Ltd., Akiruno, Japan
fYear
2003
fDate
3-5 Sept. 2003
Firstpage
183
Lastpage
186
Abstract
To accurately consider 2D dopant profile effect, we have studied transport modeling by comparing nMOSFETs with indium or boron pocket implant. Our inverse modeling has successfully extracted their features of dopant profiles and DIBL effects. It has enabled us to evaluate that the generalized hydrodynamic model is highly reliable even in smaller MOSFETs down to L/sub eff/ /spl sim/ 20 nm.
Keywords
MOSFET; doping profiles; semiconductor device models; semiconductor doping; 20 nm; 2D dopant profile effect; DIBL effects; MOSFETs; accurate transport modeling; dopant profiles; generalized hydrodynamic model; inverse modeling; Boron; DVD; Digital video broadcasting; FETs; Hydrodynamics; Implants; Indium; Inverse problems; MOSFETs; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7826-1
Type
conf
DOI
10.1109/SISPAD.2003.1233667
Filename
1233667
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