DocumentCode
2096341
Title
Device design of SiGe HBTs with low distortion characteristics using harmonic balance device simulator
Author
Sato-Wanaga, J. ; Asai, Akira ; Takagi, Takeshi ; Tanabe, Mitsuru ; Yu, Zhiping ; Dutton, Robert W.
Author_Institution
Adv. Technol. Res. Labs., Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
fYear
2003
fDate
3-5 Sept. 2003
Firstpage
199
Lastpage
202
Abstract
Distortion simulation of a SiGe HBT based on physical model and applying harmonic balance method has been demonstrated. It was obtained that for short carrier lifetime the 3/sup rd/ intermodulation distortion (IMD) current was reduced and the intercept point of 3/sup rd/ IMD was improved in 6 dBm with our example.
Keywords
Ge-Si alloys; carrier lifetime; current density; heterojunction bipolar transistors; intermodulation distortion; semiconductor device models; 3/sup rd/ intermodulation distortion current; SiGe; SiGe HBTs; device design; harmonic balance device simulator; low distortion characteristics; short carrier lifetime; Capacitance; Charge carrier lifetime; Charge carrier processes; Circuit simulation; Germanium silicon alloys; Harmonic distortion; Heterojunction bipolar transistors; Intermodulation distortion; Radio frequency; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7826-1
Type
conf
DOI
10.1109/SISPAD.2003.1233671
Filename
1233671
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