DocumentCode
2096416
Title
Study on cell characteristics of PRAM using the phase-change simulation
Author
Kim, Young-Tae ; Lee, Keun-Ho ; Chung, Won-Young ; Kim, Tai-Kyung ; Park, Young-Kwan ; Kong, Jeong-Taek
Author_Institution
Semicond. R&D Center, Samsung Electron. Co. Ltd, Gyeonggi-Do, South Korea
fYear
2003
fDate
3-5 Sept. 2003
Firstpage
211
Lastpage
214
Abstract
In this paper, we present a new simulation methodology for analyzing cell characteristics of the chalcogenide based phase-change device, PRAM (Phase-change Random Access Memory), which is the future-generation non-volatile memory. Using the new simulation methodology, we analyze the effect of process variation, which is the most sensitive factor to operate the cell of PRAM.
Keywords
concurrency theory; random-access storage; semiconductor device models; PRAM; cell characteristics; chalcogenide based phase-change device; future-generation nonvolatile memory; phase-change random access memory; phase-change simulation; simulation methodology; Analytical models; Computer aided engineering; Crystallization; DC generators; Heat transfer; Heating; Phase change random access memory; Research and development; Thermal conductivity; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7826-1
Type
conf
DOI
10.1109/SISPAD.2003.1233674
Filename
1233674
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