Title :
Compact modeling of flash memory cells including substrate-bias-dependent hot-electron gate current
Author :
Sonoda, Ken´ichiro ; Tanizawa, Motoaki ; Shimizu, Satoshi ; Araki, Yasuhiko ; Kawai, Shinji ; Ogura, Taku ; Kobayashi, Shin Ichi ; Ishikawa, Kiyoshi ; Inoui, Y. ; Kotani, Norihiko
Author_Institution :
LSI Manuf. Technol. Unit, Renesas Technol. Corp, Hyogo, Japan
Abstract :
We propose a compact model for flash memory cells that is suitable for SPICE simulation. The model includes a hot-electron gate current model that considers not only Channel Hot Electron (CHE) injection but also CHannel Initiated Secondary ELectron (CHISEL) injection to express properly substrate bias dependence. Simulation results of both programming and erasing characteristics for 130 nm-technology flash memory cells indicate that our model is useful in designing and optimizing circuit for flash memories.
Keywords :
SPICE; flash memories; hot carriers; impact ionisation; optimisation; semiconductor device models; Channel Hot Electron injection; SPICE simulation; channel initiated secondary electron injection; compact modeling; flash memory cells; hot-electron gate current model; substrate-bias-dependent hot-electron gate current; Channel hot electron injection; Circuit simulation; Circuit synthesis; Design optimization; Energy consumption; Flash memory; Flash memory cells; MOSFET circuits; Nonvolatile memory; SPICE;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
DOI :
10.1109/SISPAD.2003.1233675
