Title :
Accurate four-terminal RF MOSFET model accounting for the short-channel effect in the source-to-drain capacitance
Author :
Je, Minkyu ; Shin, Hyungcheol
Author_Institution :
RF Products Team, Samsung Electron. Co. Ltd, Kyunggi-Do, South Korea
Abstract :
A four-terminal RF MOSFET model to accurately describe the three-port network characteristics is presented. It has been found that the short-channel effect in the source-to-drain capacitance plays a critical role in predicting behavior of the MOSFET in the common-gate/body configuration. Performance of the developed model was verified with the device simulation results.
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit modelling; semiconductor device models; accurate four-terminal RF MOSFET model; common-gate/body configuration; short-channel effect; source-to-drain capacitance; three-port network characteristics; Data mining; Delay effects; Equivalent circuits; MOSFET circuits; Parameter extraction; Parasitic capacitance; RF signals; Radio frequency; Roentgenium; Voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
DOI :
10.1109/SISPAD.2003.1233683
