Quantum corrected Boltzmann transport model for tunneling effects

Author

Wu, Bo ; Tang, Ting-wei

Author_Institution

Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA

fYear

2003

fDate

3-5 Sept. 2003

Firstpage

279

Lastpage

282

Abstract

A quantum correction method based on the effective total potential used for the Monte Carlo simulation is presented. The Bohm-based and Wigner-based quantum correction models are unified under a single effective conduction-band edge (ECBE) method via a density-dependent quantum correction coefficient. The ECBE equation in thermal equilibrium as well as nonequilibrium is derived. This new equation is then applied to the MC simulation of quantum tunneling of a step potential barrier.

Keywords

Boltzmann equation; Monte Carlo methods; conduction bands; quantum interference phenomena; resonant tunnelling; semiconductors; tunnelling; Bohm-based quantum correction models; MC simulation; Monte Carlo simulation; Wigner-based quantum correction models; density-dependent quantum correction coefficient; effective conduction-band edge method; effective total potential; quantum corrected Boltzmann transport model; quantum correction method; quantum tunneling; step potential; thermal equilibrium; tunneling effects; Boltzmann equation; Carrier confinement; Monte Carlo methods; Quantization; Quantum computing; Quantum mechanics; Schrodinger equation; Semiconductor devices; Tunneling; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7826-1

Type

conf

DOI

10.1109/SISPAD.2003.1233691

Filename

1233691