Title :
Analysis and improvements of high frequency substrate losses for RF MOSFETs
Author :
Ankarcrona, J. ; Eklund, K.-H. ; Vestling, L. ; Olsson, J.
Author_Institution :
Solid State Electron., Uppsala Univ., Sweden
Abstract :
High frequency substrate losses for RF MOSFETs are analyzed using numerical device simulation. An equivalent circuit model is developed which accurately describes the off-state losses. Based on the model significant improvements in terms of output resistance are demonstrated, using an optimized device on high resistivity substrate.
Keywords :
MOSFET; equivalent circuits; semiconductor device models; RF MOSFETs; equivalent circuit model; high frequency substrate losses; numerical device simulation; off-state losses; output resistance; Capacitance; Conductivity; Diodes; Electrodes; Equations; MOSFETs; Radio frequency; Silicon; Substrates; Voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
DOI :
10.1109/SISPAD.2003.1233701
