DocumentCode
2097017
Title
Analysis and improvements of high frequency substrate losses for RF MOSFETs
Author
Ankarcrona, J. ; Eklund, K.-H. ; Vestling, L. ; Olsson, J.
Author_Institution
Solid State Electron., Uppsala Univ., Sweden
fYear
2003
fDate
3-5 Sept. 2003
Firstpage
319
Lastpage
322
Abstract
High frequency substrate losses for RF MOSFETs are analyzed using numerical device simulation. An equivalent circuit model is developed which accurately describes the off-state losses. Based on the model significant improvements in terms of output resistance are demonstrated, using an optimized device on high resistivity substrate.
Keywords
MOSFET; equivalent circuits; semiconductor device models; RF MOSFETs; equivalent circuit model; high frequency substrate losses; numerical device simulation; off-state losses; output resistance; Capacitance; Conductivity; Diodes; Electrodes; Equations; MOSFETs; Radio frequency; Silicon; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7826-1
Type
conf
DOI
10.1109/SISPAD.2003.1233701
Filename
1233701
Link To Document