Title :
Structural evolution of amorphous silicon films during P-implantation
Author :
Plugari, R. ; Vasile, E. ; Cobiami, C. ; Dascalu, D.
Author_Institution :
Inst. of Microtechnol., Bucharest, Romania
Abstract :
The initiation and evolution of silicon hillocks induced by phosphorus implantation processes on the surface of amorphous LPCVD silicon films, for doses in the range 2×1014 cm-2 -8×1015 cm-2 and 50 keV beam energy, were investigated by scanning electron microscopy. The hillock density increases as the implantation dose is raised up to 5×1015 cm-2. Further increase of the dose to 8×1015 cm-2 determines a steep decrease of the hillock density. The effects of both the concentration gradient of the as-implanted phosphorus atoms and the change of microstructure were considered in order to explain the hillock formation and evolution
Keywords :
CVD coatings; amorphous semiconductors; elemental semiconductors; ion implantation; phosphorus; scanning electron microscopy; semiconductor doping; semiconductor thin films; silicon; surface topography; LPCVD films; P-implantation; Si:P; amorphous films; concentration gradient; implantation dose; microstructure; scanning electron microscopy; silicon hillocks; structural evolution; Amorphous silicon; Electron microscopy; Semiconductor films;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557305
