DocumentCode :
2097608
Title :
Piezo-electric AlN and PZT films for micro-electronic applications
Author :
Löbl, H.P. ; Klee, M. ; Wunnicke, O. ; Kiewitt, R. ; Dekker, R. ; Pelt, E.V.
Author_Institution :
Philips Res. Lab., Aachen, Germany
Volume :
2
fYear :
1999
fDate :
1999
Firstpage :
1031
Abstract :
Piezoelectric AlN and PbZrxTi1-xO3 (PZT) layers are investigated with respect to their potential for HF micro-electronic applications. High quality AlN films with strong c-axis orientation are achieved by optimum deposition conditions and by applying nucleation layers. Electromechanical coupling factors of 0.25±0.03 have been found. PZT films grown via sol-gel processing show high coupling factors k of 0.4-0.6 and are therefore attractive for wide bandwidth applications
Keywords :
III-V semiconductors; aluminium compounds; lead compounds; permittivity; piezoelectric semiconductors; piezoelectric thin films; sol-gel processing; sputter deposition; AlN; HF micro-electronic applications; PZT; PbZrO3TiO3; c-axis orientation; electromechanical coupling factors; nucleation layers; piezoelectric films; sol-gel processing; wide bandwidth applications; Band pass filters; Bandwidth; Ceramics; Laboratories; Magnetic separation; Piezoelectric films; Scanning electron microscopy; Semiconductor films; Sputtering; Surface acoustic waves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 1999. Proceedings. 1999 IEEE
Conference_Location :
Caesars Tahoe, NV
ISSN :
1051-0117
Print_ISBN :
0-7803-5722-1
Type :
conf
DOI :
10.1109/ULTSYM.1999.849176
Filename :
849176
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2097608
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