Piezo-electric AlN and PZT films for micro-electronic applications

Author

Löbl, H.P. ; Klee, M. ; Wunnicke, O. ; Kiewitt, R. ; Dekker, R. ; Pelt, E.V.

Author_Institution

Philips Res. Lab., Aachen, Germany

Volume

2

fYear

1999

fDate

1999

Firstpage

1031

Abstract

Piezoelectric AlN and PbZr_xTi_1-xO₃ (PZT) layers are investigated with respect to their potential for HF micro-electronic applications. High quality AlN films with strong c-axis orientation are achieved by optimum deposition conditions and by applying nucleation layers. Electromechanical coupling factors of 0.25±0.03 have been found. PZT films grown via sol-gel processing show high coupling factors k of 0.4-0.6 and are therefore attractive for wide bandwidth applications

Keywords

III-V semiconductors; aluminium compounds; lead compounds; permittivity; piezoelectric semiconductors; piezoelectric thin films; sol-gel processing; sputter deposition; AlN; HF micro-electronic applications; PZT; PbZrO3TiO3; c-axis orientation; electromechanical coupling factors; nucleation layers; piezoelectric films; sol-gel processing; wide bandwidth applications; Band pass filters; Bandwidth; Ceramics; Laboratories; Magnetic separation; Piezoelectric films; Scanning electron microscopy; Semiconductor films; Sputtering; Surface acoustic waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1999. Proceedings. 1999 IEEE

Conference_Location

Caesars Tahoe, NV

ISSN

1051-0117

Print_ISBN

0-7803-5722-1

Type

conf

DOI

10.1109/ULTSYM.1999.849176

Filename

849176