Title :
Type II Strain Layer Superlattices (SLS´s) grown on GaAs Substrates
Author :
Sharma, Y.D. ; Bishop, G. ; Kim, H.S. ; Rodriguez, J.B. ; Plis, E. ; Balakrishnan, G. ; Dawson, L.R. ; Huffaker, D.L. ; Krishna, S.
Author_Institution :
Univ. of New Mexico, Albuquerque
Abstract :
We report on type-II SLS´s photodiodes grown on GaAs. The GaSb buffer was grown using a novel interfacial- misfit-approach, which relieves the strain though 90 misfit dislocations. The dark-current, quantum-efficiency and detectivity were measured.
Keywords :
III-V semiconductors; buffer layers; dark conductivity; dislocations; gallium compounds; photodiodes; semiconductor superlattices; GaAs; GaSb; buffer; dark current; interfacial misfit; misfit dislocations; quantum efficiency; type II strain layer superlattices; type-II photodiodes; Capacitive sensors; Diodes; Gallium arsenide; Infrared detectors; Laser sintering; Lattices; Substrates; Superlattices; Temperature measurement; Wet etching;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382293
