Title :
Optimization of Surface preparation and Surface Passivant for the InAs/GaSb Strain Layer Superlattice (SLS) for Mid-wavelength Infrared (MWIR) Photodetectors
Author_Institution :
Univ. of Illinois at Chicago, Chicago
Abstract :
This article addresses the problems encountered during surface preparation and surface passivation of the InAs-GaSb strain layer superlattice. An analysis of the surface preparation techniques along with the effect on the performance characteristics for different passivants is presented. The passivants and surface preparation techniques are compared on the basis of their insulation properties, capacitance-voltage (C-V) characteristics, minority carrier lifetime, and 1/f flicker noise characteristics.
Keywords :
1/f noise; III-V semiconductors; carrier lifetime; gallium compounds; indium compounds; infrared detectors; minority carriers; passivation; photodetectors; semiconductor superlattices; 1/f flicker noise; InAs-GaSb; capacitance-voltage characteristics; insulation properties; midwavelength infrared photodetectors; minority carrier lifetime; strain layer superlattice; surface passivation; surface preparation; 1f noise; Capacitance-voltage characteristics; Capacitive sensors; Charge carrier lifetime; Insulation; Laser sintering; Passivation; Performance analysis; Photodetectors; Superlattices;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382294
