DocumentCode :
2097997
Title :
Plasma power detuned synthesis of Si-QD doped Si-rich SiOx thin film for multicolor electroluminescent diodes
Author :
Chih-Hsien Cheng ; Yu-Chung Lien ; Gong-Ru Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2012
fDate :
7-10 Nov. 2012
Firstpage :
1
Lastpage :
3
Abstract :
The smaller Si-QDs result in a current endurance to operate the MOSLED at breakdown edge providing a record of maximum blue-light electroluminescent power at 59.9 μW/cm2 with highest external quantum efficiency of 2.4%.
Keywords :
electroluminescent devices; light emitting diodes; semiconductor device breakdown; semiconductor quantum dots; silicon compounds; MOSLED; QD doped thin film; SiOx; breakdown edge; maximum blue-light electroluminescent power; multicolor electroluminescent diodes; plasma power detuned synthesis; quantum efficiency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
ISSN :
2162-108X
Print_ISBN :
978-1-4673-6274-0
Type :
conf
Filename :
6510964
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2097997
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