• DocumentCode
    2097997
  • Title

    Plasma power detuned synthesis of Si-QD doped Si-rich SiOx thin film for multicolor electroluminescent diodes

  • Author

    Chih-Hsien Cheng ; Yu-Chung Lien ; Gong-Ru Lin

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2012
  • fDate
    7-10 Nov. 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The smaller Si-QDs result in a current endurance to operate the MOSLED at breakdown edge providing a record of maximum blue-light electroluminescent power at 59.9 μW/cm2 with highest external quantum efficiency of 2.4%.
  • Keywords
    electroluminescent devices; light emitting diodes; semiconductor device breakdown; semiconductor quantum dots; silicon compounds; MOSLED; QD doped thin film; SiOx; breakdown edge; maximum blue-light electroluminescent power; multicolor electroluminescent diodes; plasma power detuned synthesis; quantum efficiency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference (ACP), 2012 Asia
  • Conference_Location
    Guangzhou
  • ISSN
    2162-108X
  • Print_ISBN
    978-1-4673-6274-0
  • Type

    conf

  • Filename
    6510964
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2097997