DocumentCode :
2098176
Title :
Low-Threshold Ultrafast Surface-Passivated Photonic Crystal Nanocavity Lasers
Author :
Englund, Dirk ; Fushman, Ilya ; Vuckovic, Jelena ; Altug, Hatice
Author_Institution :
Stanford Univ., Stanford
fYear :
2007
fDate :
21-25 Oct. 2007
Firstpage :
121
Lastpage :
122
Abstract :
Efficiency and speed of photonic crystal lasers are improved by passivating InGaAs/GaAs membranes using (NH4)S treatment. Lasers show five-fold reduction in nonradiative surface recombination rate, resulting in four-fold reduction in threshold and room-temperature operation with near THz response.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; microcavity lasers; passivation; photonic crystals; semiconductor lasers; surface recombination; InGaAs-GaAs; low-threshold ultrafast surface-passivated photonic crystal nanocavity lasers; nonradiative surface recombination rate; photonic crystal lasers; Equations; Gallium arsenide; Laser modes; Passivation; Photonic crystals; Pulse measurements; Radiative recombination; Surface contamination; Surface emitting lasers; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
ISSN :
1092-8081
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2007.4382306
Filename :
4382306
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2098176
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