Title :
High Mobility Indium Gallium Zinc Oxide for Transparent Conductive Contacts and Thin Film Transistors
Author :
Suresh, Arun ; Wellenius, Patrick ; Muth, John F.
Author_Institution :
North Carolina State Univ., Raleigh
Abstract :
Thin amorphous films of high electron mobility, optically transparent indium gallium zinc oxide (IGZO) were deposited by pulsed laser deposition. Electrical conductivity was controlled allowing high performance, optically transparent thin film transistors to be fabricated.
Keywords :
amorphous semiconductors; electrical conductivity; electron mobility; gallium compounds; indium compounds; pulsed laser deposition; semiconductor growth; semiconductor thin films; thin film transistors; InGaZnO; electrical conductivity; electron mobility; pulsed laser deposition; thin amorphous films; thin film transistors; transparent conductive contacts; Amorphous materials; Conductivity; Contacts; Electron mobility; Electron optics; Indium gallium zinc oxide; Optical films; Optical pulses; Pulsed laser deposition; Thin film transistors;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382313
