Ultrasonic transducer with thermo mechanical excitation and piezoresistive detection

Author

Popescu, Dan S. ; Duscalu, D.C. ; Elwenspoek, Miko ; Lammerink, Theo

Author_Institution

Dept. of Electron., Univ. Politehnica Bucharest, Romania

Volume

1

fYear

1996

fDate

9-12 Oct 1996

Firstpage

85

Abstract

Ultrasonic transducer was fabricated from silicon buckled membrane using a thermo mechanical excitation and piezoresistive detection. The transducer has a 4 mm square silicon membrane, buckled with an initial deflection of 20 μm, actuated by dynamically heating an aluminium ring layer, 3 μm thick, with a polysilicon ring resistor. Detection is made by measuring the piezoresistive component in the polysilicon layer impedance

Keywords

buckling; electric impedance measurement; elemental semiconductors; membranes; micromachining; micromechanical devices; piezoresistive devices; silicon; thermomechanical treatment; ultrasonic transducers; 3 mum; 4 mm; Si; Si buckled membrane; Si membrane; aluminium ring layer; buckling; deflection; dynamically heating; piezoresistive detection; polysilicon layer impedance; polysilicon ring resistor; thermo mechanical excitation; ultrasonic transducer; Biomembranes; Compressive stress; Elasticity; Heating; Piezoresistance; Resistors; Silicon; Thickness measurement; Ultrasonic transducers; Vibrations;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1996., International

Conference_Location

Sinaia

Print_ISBN

0-7803-3223-7

Type

conf

DOI

10.1109/SMICND.1996.557311

Filename

557311