Photoresponse at 1.55 μm in GeSn epitaxial films grown on Si

Author

Roucka, R. ; Yu, S.-Q. ; Tolle, John ; Fang, Y.-Y. ; Wu, S.-N. ; Menendez, J. ; Kouvetakis, J.

Author_Institution

Arizona State Univ., Tempe

fYear

2007

fDate

21-25 Oct. 2007

Firstpage

178

Lastpage

179

Abstract

In summary, epitaxial Ge_1-xSn_x films with hole mobilities as high as 600 cm²V^-1s^-1 were deposited on Si(100) substrates by UHV-CVD and used to fabricate photoconductor devices employing standard semiconductor processing steps. Performance measurements of the produced device provided feedback for improvement of the Ge_1-xSn_x material quality during the growth. Photoconductor devices showed maximum 0.5% decrease of the resistance upon irradiation by 1.55 μm laser light with 5 mW power.

Keywords

chemical vapour deposition; epitaxial growth; germanium compounds; hole mobility; photoconducting materials; radiation effects; silicon; substrates; GeSn; Si; UHV-CVD; epitaxial film growth; hole mobilities; laser irradiation; material quality; photoconductor devices; photoresponse; power 5 mW; substrates; wavelength 1.55 μm; Laser feedback; Measurement; Optical materials; Photoconducting devices; Photoconducting materials; Power lasers; Semiconductor films; Semiconductor materials; Substrates; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE

Conference_Location

Lake Buena Vista, FL

ISSN

1092-8081

Print_ISBN

978-1-4244-0924-2

Electronic_ISBN

1092-8081

Type

conf

DOI

10.1109/LEOS.2007.4382335

Filename

4382335