DocumentCode :
2098806
Title :
Photoresponse at 1.55 μm in GeSn epitaxial films grown on Si
Author :
Roucka, R. ; Yu, S.-Q. ; Tolle, John ; Fang, Y.-Y. ; Wu, S.-N. ; Menendez, J. ; Kouvetakis, J.
Author_Institution :
Arizona State Univ., Tempe
fYear :
2007
fDate :
21-25 Oct. 2007
Firstpage :
178
Lastpage :
179
Abstract :
In summary, epitaxial Ge1-xSnx films with hole mobilities as high as 600 cm2V-1s-1 were deposited on Si(100) substrates by UHV-CVD and used to fabricate photoconductor devices employing standard semiconductor processing steps. Performance measurements of the produced device provided feedback for improvement of the Ge1-xSnx material quality during the growth. Photoconductor devices showed maximum 0.5% decrease of the resistance upon irradiation by 1.55 μm laser light with 5 mW power.
Keywords :
chemical vapour deposition; epitaxial growth; germanium compounds; hole mobility; photoconducting materials; radiation effects; silicon; substrates; GeSn; Si; UHV-CVD; epitaxial film growth; hole mobilities; laser irradiation; material quality; photoconductor devices; photoresponse; power 5 mW; substrates; wavelength 1.55 μm; Laser feedback; Measurement; Optical materials; Photoconducting devices; Photoconducting materials; Power lasers; Semiconductor films; Semiconductor materials; Substrates; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
ISSN :
1092-8081
Print_ISBN :
978-1-4244-0924-2
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2007.4382335
Filename :
4382335
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2098806
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