DocumentCode
2098823
Title
Integrated InGaAs pin-diode on exactly oriented silicon (001) substrate suitable for 10 Gbit/s digital applications
Author
Poloczek, A. ; Weiss, M. ; Fedderwitz, S. ; Stoehr, A. ; Prost, W. ; Jaeger, D. ; Tegude, F.J.
Author_Institution
Univ. Duisburg-Essen, Duisburg
fYear
2007
fDate
21-25 Oct. 2007
Firstpage
180
Lastpage
181
Abstract
An InGaAs pin-diode has been grown on (001) Si- substrate overcoming the lattice mismatch by introducing an III/V-quasi-buffer. The device high speed performance is demonstrated by BER measurements up to 10 Gbit/s.
Keywords
III-V semiconductors; digital integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; p-i-n diodes; InGaAs; Si; bit error rate; bit rate 10 Gbit/s; lattice mismatch; monolithic integration; pin diode; silicon (001) substrate; Bit error rate; Epitaxial growth; Indium gallium arsenide; Indium phosphide; Lattices; Optical buffering; Optical devices; Optical microscopy; Silicon; Substrates; III/V on silicon; bit error rate; co-integration; photo detector; pin-diode;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location
Lake Buena Vista, FL
ISSN
1092-8081
Print_ISBN
978-1-4244-0925-9
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2007.4382336
Filename
4382336
Link To Document