• DocumentCode
    2098836
  • Title

    Room-Temperature Direct Bonding for Integrated Optical Devices

  • Author

    Takei, R. ; Abe, K. ; Mizumoto, T.

  • Author_Institution
    Tokyo Inst. of Technol., Tokyo
  • fYear
    2007
  • fDate
    21-25 Oct. 2007
  • Firstpage
    182
  • Lastpage
    183
  • Abstract
    We report a room-temperature direct bonding technique for wafer combinations of InP-Ce:YIG, Si-InP and Si-LiNbO3. This technique is versatile for integrating optical devices that are composed of different crystals.
  • Keywords
    III-V semiconductors; cerium; elemental semiconductors; indium compounds; integrated optics; lithium compounds; optical isolators; optical waveguides; silicon; wafer bonding; yttrium compounds; InP-Y3Fe5O12:Ce; Si-InP; Si-LiNbO3; direct bonding; integrated optical devices; room temperature; semiconductor laser; wafer; waveguide optical isolator; High speed optical techniques; III-V semiconductor materials; Integrated optics; Optical devices; Optical modulation; Optical surface waves; Optical waveguides; Plasma temperature; Stimulated emission; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
  • Conference_Location
    Lake Buena Vista, FL
  • ISSN
    1092-8081
  • Print_ISBN
    978-1-4244-0925-9
  • Electronic_ISBN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/LEOS.2007.4382337
  • Filename
    4382337
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2098836