DocumentCode :
2098836
Title :
Room-Temperature Direct Bonding for Integrated Optical Devices
Author :
Takei, R. ; Abe, K. ; Mizumoto, T.
Author_Institution :
Tokyo Inst. of Technol., Tokyo
fYear :
2007
fDate :
21-25 Oct. 2007
Firstpage :
182
Lastpage :
183
Abstract :
We report a room-temperature direct bonding technique for wafer combinations of InP-Ce:YIG, Si-InP and Si-LiNbO3. This technique is versatile for integrating optical devices that are composed of different crystals.
Keywords :
III-V semiconductors; cerium; elemental semiconductors; indium compounds; integrated optics; lithium compounds; optical isolators; optical waveguides; silicon; wafer bonding; yttrium compounds; InP-Y3Fe5O12:Ce; Si-InP; Si-LiNbO3; direct bonding; integrated optical devices; room temperature; semiconductor laser; wafer; waveguide optical isolator; High speed optical techniques; III-V semiconductor materials; Integrated optics; Optical devices; Optical modulation; Optical surface waves; Optical waveguides; Plasma temperature; Stimulated emission; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
ISSN :
1092-8081
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2007.4382337
Filename :
4382337
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2098836
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