Title :
Production technology of high performance III-Nitride devices
Author_Institution :
LG Innotek, Seoul, South Korea
Abstract :
Large scale production of III-Nitride LEDs requires close attention to scalability and cost effectiveness of every technology adopted for production. Substrate diameter, material, and potential applicability to other III-N devices are important factors to consider.
Keywords :
III-V semiconductors; light emitting diodes; mass production; wide band gap semiconductors; LED; cost effectiveness; large scale production; light emitting diodes;
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-6274-0
