DocumentCode
2099688
Title
Fabrication and characterization of InGaAsP rectangular ring lasers with a double shallow ridge waveguide structure
Author
Zhang, R. ; Ren, Z. ; Yu, S.
Author_Institution
Univ. of Bristol, Bristol
fYear
2007
fDate
21-25 Oct. 2007
Firstpage
258
Lastpage
259
Abstract
Fabrication of InGaAsP double shallow ridge vertical-coupled rectangular ring lasers by a novel cascade etching technique is demonstrated. Varied threshold current dependent on coupling current and single mode operation just beyond the thresholds are observed.
Keywords
III-V semiconductors; etching; gallium arsenide; indium compounds; ring lasers; semiconductor lasers; InGaAsP; cascade etching technique; double shallow ridge waveguide structure; rectangular ring lasers; single mode operation; Etching; Laser modes; Optical device fabrication; Optical losses; Optical waveguides; Quantum cascade lasers; Rectangular waveguides; Ring lasers; Vertical cavity surface emitting lasers; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location
Lake Buena Vista, FL
ISSN
1092-8081
Print_ISBN
978-1-4244-0925-9
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2007.4382375
Filename
4382375
Link To Document