Title :
Fabrication and characterization of InGaAsP rectangular ring lasers with a double shallow ridge waveguide structure
Author :
Zhang, R. ; Ren, Z. ; Yu, S.
Author_Institution :
Univ. of Bristol, Bristol
Abstract :
Fabrication of InGaAsP double shallow ridge vertical-coupled rectangular ring lasers by a novel cascade etching technique is demonstrated. Varied threshold current dependent on coupling current and single mode operation just beyond the thresholds are observed.
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; ring lasers; semiconductor lasers; InGaAsP; cascade etching technique; double shallow ridge waveguide structure; rectangular ring lasers; single mode operation; Etching; Laser modes; Optical device fabrication; Optical losses; Optical waveguides; Quantum cascade lasers; Rectangular waveguides; Ring lasers; Vertical cavity surface emitting lasers; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382375
