DocumentCode :
2099695
Title :
A new bipolar magnetotransistor with combined phenomena of carrier deflection and emitter injection modulation
Author :
Neagoe, Otilia ; Avram, Marioara
Author_Institution :
Res. Inst. for Electron. Components, Bucharest, Romania
Volume :
1
fYear :
1996
fDate :
9-12 Oct 1996
Firstpage :
97
Abstract :
The paper presents the project, fabrication and experimental results of a new dual-collector bipolar magnetotransistor. Two major operating principles such as the emitter injection modulation and the carrier deflection are reported a special design causes the variation of the device active area due to the carrier deflection in the base region so that a large collector current difference may result
Keywords :
bipolar transistors; magnetic field measurement; magnetic sensors; bipolar magnetotransistor; carrier deflection; collector current; combined phenomena; dual-collector bipolar magnetotransistor; emitter injection modulation; fabrication; Ice; Joining processes; Magnetic circuits; Magnetic devices; Magnetic fields; Magnetic modulators; Resistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
Type :
conf
DOI :
10.1109/SMICND.1996.557314
Filename :
557314
Link To Document :
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