DocumentCode :
2099772
Title :
Modeling and Test of Traveling-Wave Electrode Mzch-Zehnder InP/InGaAsP Quantum Well Modulators
Author :
Kunkee, Elizabeth Twyford ; Shah, Akhil R. ; Shih, Sean ; Smith, Andrew D. ; Davis, Richard
Author_Institution :
Northrop Grumman Space Technol., Manhattan Beach
fYear :
2007
fDate :
21-25 Oct. 2007
Firstpage :
266
Lastpage :
267
Abstract :
We present a theoretical model and experimental validation for electrode design of semiconductor traveling wave modulators. An InP Mach-Zehnder interferometer gives a Vpi of 1.7 V, optical insertion loss of 11 dB, and bandwidth of 8 GHz.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical modulation; semiconductor quantum wells; InP-InGaAsP; optical insertion loss; semiconductor traveling wave modulators; traveling-wave electrode Mach-Zehnder InP/InGaAsP quantum well modulators; Electrodes; Indium phosphide; Optical interferometry; Optical losses; Optical modulation; Optical sensors; Optical signal processing; Optical waveguides; Radio frequency; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
ISSN :
1092-8081
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2007.4382379
Filename :
4382379
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2099772
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