• DocumentCode
    2099772
  • Title

    Modeling and Test of Traveling-Wave Electrode Mzch-Zehnder InP/InGaAsP Quantum Well Modulators

  • Author

    Kunkee, Elizabeth Twyford ; Shah, Akhil R. ; Shih, Sean ; Smith, Andrew D. ; Davis, Richard

  • Author_Institution
    Northrop Grumman Space Technol., Manhattan Beach
  • fYear
    2007
  • fDate
    21-25 Oct. 2007
  • Firstpage
    266
  • Lastpage
    267
  • Abstract
    We present a theoretical model and experimental validation for electrode design of semiconductor traveling wave modulators. An InP Mach-Zehnder interferometer gives a Vpi of 1.7 V, optical insertion loss of 11 dB, and bandwidth of 8 GHz.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical modulation; semiconductor quantum wells; InP-InGaAsP; optical insertion loss; semiconductor traveling wave modulators; traveling-wave electrode Mach-Zehnder InP/InGaAsP quantum well modulators; Electrodes; Indium phosphide; Optical interferometry; Optical losses; Optical modulation; Optical sensors; Optical signal processing; Optical waveguides; Radio frequency; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
  • Conference_Location
    Lake Buena Vista, FL
  • ISSN
    1092-8081
  • Print_ISBN
    978-1-4244-0925-9
  • Electronic_ISBN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/LEOS.2007.4382379
  • Filename
    4382379