DocumentCode
2099772
Title
Modeling and Test of Traveling-Wave Electrode Mzch-Zehnder InP/InGaAsP Quantum Well Modulators
Author
Kunkee, Elizabeth Twyford ; Shah, Akhil R. ; Shih, Sean ; Smith, Andrew D. ; Davis, Richard
Author_Institution
Northrop Grumman Space Technol., Manhattan Beach
fYear
2007
fDate
21-25 Oct. 2007
Firstpage
266
Lastpage
267
Abstract
We present a theoretical model and experimental validation for electrode design of semiconductor traveling wave modulators. An InP Mach-Zehnder interferometer gives a Vpi of 1.7 V, optical insertion loss of 11 dB, and bandwidth of 8 GHz.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical modulation; semiconductor quantum wells; InP-InGaAsP; optical insertion loss; semiconductor traveling wave modulators; traveling-wave electrode Mach-Zehnder InP/InGaAsP quantum well modulators; Electrodes; Indium phosphide; Optical interferometry; Optical losses; Optical modulation; Optical sensors; Optical signal processing; Optical waveguides; Radio frequency; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location
Lake Buena Vista, FL
ISSN
1092-8081
Print_ISBN
978-1-4244-0925-9
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2007.4382379
Filename
4382379
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