DocumentCode
20998
Title
Switchable Electric Field Induced Diode Effect in Nanostructured Porous Silicon
Author
Marin, Olivier ; Urteaga, R. ; Comedi, D. ; Koropecki, R.R.
Author_Institution
INTEC, Univ. Nac. del Litoral, Santa Fe, Argentina
Volume
34
Issue
5
fYear
2013
fDate
May-13
Firstpage
590
Lastpage
592
Abstract
Unidirectional current flow (diode-like behavior) is observed in Al/Nanostructured Porous Silicon/Al structures (Al/SP/Al) after applying a forming electric field (E) for a long time. We found that rectifying characteristics depend on the direction of E. The forward direction coincides with the direction of E. The diode direction switches when E is inverted. The rectification factor passes from 200 to 26 from one direction to the other, the effect is reversible and can be repeated several times.
Keywords
aluminium; electric field effects; nanoelectronics; nanostructured materials; porous semiconductors; rectification; semiconductor diodes; silicon; Al; Si; diode-like behavior; nanostructured porous silicon; rectification factor; rectifying characteristics; switchable electric field induced diode effect; unidirectional current flow; Metal/semiconductor interfaces; porous silicon (PS); switchable diode effect;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2253754
Filename
6502196
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