Title :
Radiative Efficiency of InGaAs/InGaAsP/GaAs Quantum Well Lasers
Author :
Tsvid, G. ; Kirch, J. ; Mawst, L.J. ; Kanskar, M. ; Cai, J. ; Arif, R.A. ; Tansu, N. ; Smowton, P.M. ; Blood, P.
Author_Institution :
Univ. of Wisconsin-Madison, Madison
Abstract :
The gain, spontaneous emission spectra, and radiative efficiency of InGaAs quantum well laser structures are determined using single pass, segmented contact amplified emission measurements. The relationship between injection efficiency and radiative efficiency is also considered.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; semiconductor quantum wells; spontaneous emission; InGaAs-InGaAsP-GaAs; injection efficiency; quantum well laser; radiative efficiency; segmented contact amplified emission; spontaneous emission spectra; Gain measurement; Gallium arsenide; Indium gallium arsenide; Optical computing; Physics computing; Quantum computing; Quantum well lasers; Radiative recombination; Spontaneous emission; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382403
