DocumentCode
2100323
Title
Gauge and differential pressure transducers with monolithic integrated silicon piezoresistive sensor-for an extensive temperature range
Author
Beshlin, V.S. ; Kantser, V.G. ; Hunteanu, H.I. ; Beshliu, V.V. ; Batrinoea, A.G.
Author_Institution
Int. Lab., Kishinev, Moldova
Volume
1
fYear
1996
fDate
9-12 Oct 1996
Firstpage
105
Abstract
The basic structure, configuration and design of a gauge and differential pressure transducers with a monolithic integrated silicon piezoresistive sensor is proposed for an extensive temperature range from -60°C to 125°C. The microelectronic technology of a monolithic silicon sensor with the special compensation integrated network is described. The main metrological characteristics of pressure transducers are presented
Keywords
electric sensing devices; elemental semiconductors; monolithic integrated circuits; piezoresistive devices; pressure sensors; silicon; transducers; -80 to 125 C; Si; Si monolithic piezoresistive sensor; compensation; differential pressure transducers; gauge; membranes; microelectronic technology; Aerospace electronics; High temperature superconductors; Laboratories; Piezoresistance; Sensor phenomena and characterization; Silicon; Tellurium; Temperature distribution; Temperature sensors; Transducers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1996., International
Conference_Location
Sinaia
Print_ISBN
0-7803-3223-7
Type
conf
DOI
10.1109/SMICND.1996.557316
Filename
557316
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