Title :
Gauge and differential pressure transducers with monolithic integrated silicon piezoresistive sensor-for an extensive temperature range
Author :
Beshlin, V.S. ; Kantser, V.G. ; Hunteanu, H.I. ; Beshliu, V.V. ; Batrinoea, A.G.
Author_Institution :
Int. Lab., Kishinev, Moldova
Abstract :
The basic structure, configuration and design of a gauge and differential pressure transducers with a monolithic integrated silicon piezoresistive sensor is proposed for an extensive temperature range from -60°C to 125°C. The microelectronic technology of a monolithic silicon sensor with the special compensation integrated network is described. The main metrological characteristics of pressure transducers are presented
Keywords :
electric sensing devices; elemental semiconductors; monolithic integrated circuits; piezoresistive devices; pressure sensors; silicon; transducers; -80 to 125 C; Si; Si monolithic piezoresistive sensor; compensation; differential pressure transducers; gauge; membranes; microelectronic technology; Aerospace electronics; High temperature superconductors; Laboratories; Piezoresistance; Sensor phenomena and characterization; Silicon; Tellurium; Temperature distribution; Temperature sensors; Transducers;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557316
