Title :
GaAs nanowires fabricated using colloidal lithography and dry etching
Author :
Ke Chen ; Mingyu Li ; Jian-Jun He ; LaPierre, Ray
Author_Institution :
State Key Lab. of Modern Opt. Instrum., Zhejiang Univ., Hangzhou, China
Abstract :
A method for the fabrication of large-area well-ordered periodic GaAs nanowires have been developed based on colloidal lithography and a two-step inductively coupled plasma (ICP) etching. The reflectance spectra of the GaAs nanowire samples are measured and compared with nanowires fabricated by using molecular beam epitaxy.
Keywords :
III-V semiconductors; etching; gallium arsenide; lithography; molecular beam epitaxial growth; nanofabrication; nanophotonics; nanowires; GaAs; colloidal lithography; dry etching; molecular beam epitaxy; nanowires fabrication; plasma etching; reflectance spectra; GaAs solar cell; Nanowire; colloidal lithography; spin-coating;
Conference_Titel :
Communications and Photonics Conference and Exhibition, 2011. ACP. Asia
Conference_Location :
Shanghai
Print_ISBN :
978-0-8194-8961-6
