DocumentCode :
2100539
Title :
Photoluminescence decay dynamics of silicon-rich silicon nitride film in photonic crystal nanocavity
Author :
Makarova, Maria ; Vuckovic, Jelena ; Sanda, Hiroyuki ; Nishi, Yoshio
Author_Institution :
Stanford Univ., Stanford
fYear :
2007
fDate :
21-25 Oct. 2007
Firstpage :
329
Lastpage :
330
Abstract :
We described design and fabrication of the light source, and demonstrated sevenfold photoluminescence (PL) enhancement from a single cavity. In this approach, photonic crystal cavities are used to enhance PL by increasing spontaneous emission rate from Si nanoparticles due to the Purcell effect, and by increasing collection efficiency. Here we report our results on the measured photoluminescence decay time, cavity design optimization, and efficiency of the material.
Keywords :
elemental semiconductors; nanoparticles; photoluminescence; photonic crystals; semiconductor thin films; voids (solid); Purcell effect; Si; cavity design optimization; light source; nanocavity; photoluminescence decay dynamics; photonic crystal; silicon nanoparticles; silicon-rich silicon nitride film; Design optimization; Fabrication; Light sources; Nanoparticles; Photoluminescence; Photonic crystals; Semiconductor films; Silicon; Spontaneous emission; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
ISSN :
1092-8081
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2007.4382411
Filename :
4382411
Link To Document :
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