Photoluminescence decay dynamics of silicon-rich silicon nitride film in photonic crystal nanocavity

Author

Makarova, Maria ; Vuckovic, Jelena ; Sanda, Hiroyuki ; Nishi, Yoshio

Author_Institution

Stanford Univ., Stanford

fYear

2007

fDate

21-25 Oct. 2007

Firstpage

329

Lastpage

330

Abstract

We described design and fabrication of the light source, and demonstrated sevenfold photoluminescence (PL) enhancement from a single cavity. In this approach, photonic crystal cavities are used to enhance PL by increasing spontaneous emission rate from Si nanoparticles due to the Purcell effect, and by increasing collection efficiency. Here we report our results on the measured photoluminescence decay time, cavity design optimization, and efficiency of the material.

Keywords

elemental semiconductors; nanoparticles; photoluminescence; photonic crystals; semiconductor thin films; voids (solid); Purcell effect; Si; cavity design optimization; light source; nanocavity; photoluminescence decay dynamics; photonic crystal; silicon nanoparticles; silicon-rich silicon nitride film; Design optimization; Fabrication; Light sources; Nanoparticles; Photoluminescence; Photonic crystals; Semiconductor films; Silicon; Spontaneous emission; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE

Conference_Location

Lake Buena Vista, FL

ISSN

1092-8081

Print_ISBN

978-1-4244-0925-9

Electronic_ISBN

1092-8081

Type

conf

DOI

10.1109/LEOS.2007.4382411

Filename

4382411