A wideband unity-gain buffer in 0.13-μm CMOS

Author

Keikhosravy, Kamyar ; Kamalinejad, Pouya ; Mirabbasi, Shahriar ; Leung, Victor

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of British Columbia, Vancouver, BC, Canada

fYear

2013

fDate

8-11 Dec. 2013

Firstpage

9

Lastpage

12

Abstract

In this paper, an ultra wideband analog voltage-mode buffer is presented which can drive a load impedance of 50 Ω. The presented feedback-based buffer uses a compound amplifier which is a parallel combination of a high-DC gain operational amplifier and a operation transconductance amplifier to achieve a high unity gain bandwidth. A proof-of-concept prototype is designed and fabricated in a 0.13 μm CMOS process. The simulation and measurement results of the proposed buffer are in good agreement. The prototype buffer circuit consumes 7.34 mW from a 1.3-V supply, while buffering a 2 GHz sinusoidal input signal with a 0.4 V peak-to-peak (V_pp) amplitude and driving an AC-coupled 50-Ω load.

Keywords

CMOS analogue integrated circuits; buffer circuits; feedback amplifiers; integrated circuit design; operational amplifiers; wideband amplifiers; CMOS process; compound amplifier; feedback-based buffer; frequency 2 GHz; high-DC gain operational amplifier; operation transconductance amplifier; power 7.34 mW; proof-of-concept prototype; prototype buffer circuit; resistance 50 ohm; size 0.13 mum; ultra wideband analog voltage-mode buffer; unity gain bandwidth; voltage 0.4 V; voltage 1.3 V; Bandwidth; CMOS integrated circuits; Compounds; Frequency response; Gain; Impedance; Transistors; Analog buffer; CMOS; voltage follower; wideband buffer;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits, and Systems (ICECS), 2013 IEEE 20th International Conference on

Conference_Location

Abu Dhabi

Type

conf

DOI

10.1109/ICECS.2013.6815332

Filename

6815332