Title :
Development of AlInGaN-based Blue laser diodes
Author :
Park, Y. ; Son, J.K. ; Nam, O.H. ; Lee, S.N. ; Kim, K.-S. ; Paek, H.S. ; Sung, Y.J. ; Kim, H.K. ; Jang, T.
Author_Institution :
Samsung Electro-Mech., Gyunggido
Abstract :
The characteristics of blue (-450 nm) and blue-green (>480 nm) LDs on free standing GaN substrates are presented and comprehensive PL (photoluminescence), TRPL (time resolved photoluminescence) measurements are correlated with the characteristics of blue-green LDs.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; photoluminescence; semiconductor lasers; time resolved spectra; wide band gap semiconductors; AlInGaN; GaN; blue laser diodes; blue-green laser diodes; free standing GaN substrates; time resolved photoluminescence; Diode lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382434
