DocumentCode :
2101163
Title :
Amplitude characterization of memristive devices
Author :
Capela Duarte, Joao ; Ventura Martins, Ernesto ; Alves, Luis Nero
Author_Institution :
Inst. de Telecomun., Aveiro, Portugal
fYear :
2013
fDate :
8-11 Dec. 2013
Firstpage :
45
Lastpage :
48
Abstract :
Memristive Devices (MDs) are usually described by their associated hysteresis loops. Their distinctive memory properties stem from this unusual characteristic, which depends on both stimulus frequency and amplitude. Understanding the behavior of these devices is of paramount importance for a multitude of different applications. This paper investigates the dependency of loop area and length on stimulus amplitude of MDs. The characterization methodology follows the morphological approach, introduced by the authors in [10], for frequency characterization. An example, considering thin film TiO2 MDs reveals that the peak amplitude (amplitude where the loop has maximum area) of the device depends strongly on device dimensions and physical properties.
Keywords :
memristors; thin film resistors; titanium compounds; TiO2; characterization methodology; device dimensions; distinctive memory properties; hysteresis loops; loop area; loop length; memristive devices; morphological approach; physical properties; stimulus amplitude; stimulus frequency; thin film MD; Dynamic range; Hysteresis; Magnetic hysteresis; Mathematical model; Memristors; Semiconductor process modeling; Switches; Memristive devices and systems; amplitude characterization; hysteretic loops;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits, and Systems (ICECS), 2013 IEEE 20th International Conference on
Conference_Location :
Abu Dhabi
Type :
conf
DOI :
10.1109/ICECS.2013.6815341
Filename :
6815341
Link To Document :
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