• DocumentCode
    2101163
  • Title

    Amplitude characterization of memristive devices

  • Author

    Capela Duarte, Joao ; Ventura Martins, Ernesto ; Alves, Luis Nero

  • Author_Institution
    Inst. de Telecomun., Aveiro, Portugal
  • fYear
    2013
  • fDate
    8-11 Dec. 2013
  • Firstpage
    45
  • Lastpage
    48
  • Abstract
    Memristive Devices (MDs) are usually described by their associated hysteresis loops. Their distinctive memory properties stem from this unusual characteristic, which depends on both stimulus frequency and amplitude. Understanding the behavior of these devices is of paramount importance for a multitude of different applications. This paper investigates the dependency of loop area and length on stimulus amplitude of MDs. The characterization methodology follows the morphological approach, introduced by the authors in [10], for frequency characterization. An example, considering thin film TiO2 MDs reveals that the peak amplitude (amplitude where the loop has maximum area) of the device depends strongly on device dimensions and physical properties.
  • Keywords
    memristors; thin film resistors; titanium compounds; TiO2; characterization methodology; device dimensions; distinctive memory properties; hysteresis loops; loop area; loop length; memristive devices; morphological approach; physical properties; stimulus amplitude; stimulus frequency; thin film MD; Dynamic range; Hysteresis; Magnetic hysteresis; Mathematical model; Memristors; Semiconductor process modeling; Switches; Memristive devices and systems; amplitude characterization; hysteretic loops;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits, and Systems (ICECS), 2013 IEEE 20th International Conference on
  • Conference_Location
    Abu Dhabi
  • Type

    conf

  • DOI
    10.1109/ICECS.2013.6815341
  • Filename
    6815341