• DocumentCode
    2101200
  • Title

    Dual sided doped memristor and it´s mathematical modelling

  • Author

    Shrivastava, Ashish ; Singh, Jaskirat

  • Author_Institution
    Dept. of Electron. & Commun. Eng., Indian Inst. of Inf. Technol., Design & Manuf., Jabalpur, India
  • fYear
    2013
  • fDate
    8-11 Dec. 2013
  • Firstpage
    49
  • Lastpage
    51
  • Abstract
    In this paper, a new structure for memristor with two active layers of TiO2 and its linear ions drift model has been proposed. Simulation results show significant improvement in the memristor ROFF/RON ratio as compared to single active layer HP lab (conventional) memristor. As a result, switching speed and noise margin of the proposed memristor will be far better than the conventional memristor. With the aid of the mathematical modelling, we examine the current-voltage characteristic of the proposed device structure and compared with conventional memristor.
  • Keywords
    memristors; semiconductor device models; semiconductor doping; dual sided doped memristor; linear ions drift model; noise margin; switching speed; Conductivity; Equations; Integrated circuit modeling; Ions; Mathematical model; Memristors; Resistance; Dopant drifting; Mathematical modelling; Memristance; Non-Stoichiometric defects; Reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits, and Systems (ICECS), 2013 IEEE 20th International Conference on
  • Conference_Location
    Abu Dhabi
  • Type

    conf

  • DOI
    10.1109/ICECS.2013.6815342
  • Filename
    6815342
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2101200