DocumentCode :
2101200
Title :
Dual sided doped memristor and it´s mathematical modelling
Author :
Shrivastava, Ashish ; Singh, Jaskirat
Author_Institution :
Dept. of Electron. & Commun. Eng., Indian Inst. of Inf. Technol., Design & Manuf., Jabalpur, India
fYear :
2013
fDate :
8-11 Dec. 2013
Firstpage :
49
Lastpage :
51
Abstract :
In this paper, a new structure for memristor with two active layers of TiO2 and its linear ions drift model has been proposed. Simulation results show significant improvement in the memristor ROFF/RON ratio as compared to single active layer HP lab (conventional) memristor. As a result, switching speed and noise margin of the proposed memristor will be far better than the conventional memristor. With the aid of the mathematical modelling, we examine the current-voltage characteristic of the proposed device structure and compared with conventional memristor.
Keywords :
memristors; semiconductor device models; semiconductor doping; dual sided doped memristor; linear ions drift model; noise margin; switching speed; Conductivity; Equations; Integrated circuit modeling; Ions; Mathematical model; Memristors; Resistance; Dopant drifting; Mathematical modelling; Memristance; Non-Stoichiometric defects; Reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits, and Systems (ICECS), 2013 IEEE 20th International Conference on
Conference_Location :
Abu Dhabi
Type :
conf
DOI :
10.1109/ICECS.2013.6815342
Filename :
6815342
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2101200
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