Title :
Semiconductor Devices Based on Two-Photon Emission
Author :
Hayat, Alex ; Ginzburg, Pavel ; Kaminski, Noam ; Orenstein, Meir
Author_Institution :
Technion - Israel Inst. of Technol., Haifa
Abstract :
The first experimental observation of two-photon emission from semiconductors provides efficient compact room-temperature entangled photons sources for quantum information and spectroscopy, whereas the measured two-photon gain may lead to novel lasers emitting ultrashort optical pulses.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; optical pulse generation; quantum well lasers; semiconductor quantum wells; two-photon processes; GaInP-AlGalnP- interface; entangled photons sources; lasers emitting ultrashort optical pulses; quantum information; quantum spectroscopy; semiconductor devices; two-photon emission; Atomic measurements; Extraterrestrial measurements; Gallium arsenide; Optical imaging; Quantum computing; Quantum entanglement; Quantum mechanics; Semiconductor devices; Spectroscopy; Wideband;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382436
