Characteristics and sensitivity analysis of Gate Inside Junctionless Transistor (GI-JLT)

In this paper, we have analyzed the impact of gate dielectric, doping concentration and channel engineering on the characteristics and sensitivity of Gate Inside Junctionless Transistor (GI-JLT). A numerical TCAD device simulator 3-D ATLAS version 2.10.18.R shows that GI-JLT can deplete the channel carriers more effectively compared with tri-gate and Gate-All-Around Junctionless Transistor (GAA-JLT). The GI-JLT transistor exhibits good transfer characteristics and reduces short channel effect (SCE) than a conventional inversion mode transistor with a high I_ON/I_OFF ratio of 10¹¹ subthreshold swing of 64 mV/dec and DIBL of 35 mV for the channel length of 18 nm with Aluminum Nitride (AlN) as gate dielectric material of thickness 1 nm. The characteristics and sensitivity of GI-JLT are analyzed by varying dielectric material, dielectric thickness, doping concentration and channel length. The simulation results indicate the suitability of the proposed novel structure for replacing the conventional CMOS inversion mode device.