Title :
Highly sensitive InGaAs/InP photo-FET with wide spectral rang
Author_Institution :
Adv. Ind. Sci. & Technol. (AIST), Tsukuba
Abstract :
Highly sensitive InGaAs/InP photo-FETs are developed using conventional optical lithography and selective wet etching techniques. The photo-FETs consist of shallow InGaAs photo-diodes and charge detection FETs vertically stacked in the same epitaxial layer. As a result, they have a built-in matrix-switching function for the column selection of two-dimensional arrays in addition to high photosensitivity in the visible to near-infrared regions.
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; indium compounds; photodiodes; photolithography; phototransistors; semiconductor epitaxial layers; InGaAs-InP; built-in matrix-switching function; epitaxial layer; high-sensitive photo-FET; optical lithography; photodiodes; photosensitivity; two-dimensional arrays; vertically stacked charge detection FET; wet etching techniques; Charge carrier processes; Electrodes; Epitaxial layers; FETs; Indium compounds; Indium gallium arsenide; Indium phosphide; Infrared detectors; Lighting; Wire;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382440
