Hydrazine-Based Fermi-Level Depinning Process on Metal/Germanium Schottky Junction

Author

Hyun-Wook Jung ; Woo-Shik Jung ; Jin-Hong Park

Author_Institution

Sch. of Electron. & Electr. Eng., Sungkyunkwan Univ., Suwon, South Korea

Volume

34

Issue

5

fYear

2013

fDate

May-13

Firstpage

599

Lastpage

601

Abstract

In this letter, we propose a hydrazine (N₂H₄)-based nitridation process, which reduces the native oxide (GeO_x) component and finally transforms it into GeO_xN_y on intrinsic Ge, to relieve the E_F pinning problem. The decomposition of GeO_x and formation of GeO_xN_y by N₂H₄ are systematically investigated through cross-sectional transmission electron microscopy, X-ray photoelectron spectroscopy, and atomic force microscopy analyses. After performing the N₂H₄-based nitridation process for 12 h, high Φ_H (~0.59 eV) and therefore high ON/OFF current ratio (~10⁴) are achieved for Ti/Ge Schottky junction diode.

Keywords

Fermi level; Schottky diodes; X-ray photoelectron spectra; atomic force microscopy; decomposition; germanium; germanium compounds; nitridation; nitrogen compounds; titanium; transmission electron microscopy; EF pinning problem; GeO_xN_y; N₂H₄; Ti-Ge; Ti-Ge Schottky junction diode; X-ray photoelectron spectroscopy; atomic force microscopy; cross-sectional transmission electron microscopy; decomposition; hydrazine-based Fermi-level depinning process; intrinsic Ge; metal-germanium Schottky junction; native oxide component; nitridation process; on-off current ratio; time 12 h; Fermi-level depinning; Germanium; Schottky diode; hydrazine; passivation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2253759

Filename

6502197