Title :
Identifying the origin of Non-Radiative Recombination in In(Ga)As Quantum Dot Lasers
Author :
Smowton, P.M. ; George, A.A. ; Sandall, I.C. ; Liu, H.Y. ; Hopkinson, M.
Author_Institution :
Cardiff Univ., Cardiff
Abstract :
Using p-doped and undoped InGaAs quantum-dot samples, where the elevated temperature threshold current performance is similar, we identify the important non-radiative recombination mechanisms in all InGaAs quantum-dot-lasers using measurements of the non- radiative recombination and un-amplified spontaneous emission.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; semiconductor quantum dots; InGaAs; non-radiative recombination; quantum dot lasers; un-amplified spontaneous emission; Current density; Current measurement; Gallium arsenide; Indium gallium arsenide; Quantum dot lasers; Quantum well lasers; Radiative recombination; Spontaneous emission; Temperature dependence; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382462
