Title :
Threshold Current Reduction and Output Power Enhancement with Magnetic Field in Sub-Monolayer InAs Quantum Dot VCSELs
Author :
Basu, D. ; Saha, D. ; Holub, M. ; Mi, Z. ; Wu, C.C. ; Bhattacharya, P.
Author_Institution :
Univ. of Michigan, Ann Arbor
Abstract :
The characteristics of a InAs/GaAs self-organized quantum dot (QD) vertical cavity surface-emitting laser (VCSEL) with both non-magnetic and ferromagnetic (FM) contacts under an externally-applied magnetic field in the Faraday geometry is investigated. Considerable enhancement in output light intensity and threshold current reduction when the magnetic field is in the out-of-plane direction is observed. In contrast, little or no change is observed for an in-plane magnetic field.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; quantum dot lasers; surface emitting lasers; Faraday geometry; InAs-GaAs; VCSEL; externally-applied magnetic field; ferromagnetic contacts; nonmagnetic contacts; output light intensity enhancement; self-organized quantum dot vertical cavity surface-emitting laser; threshold current reduction; Charge carrier processes; Current measurement; Gallium arsenide; Magnetic field measurement; Magnetic fields; Molecular beam epitaxial growth; Power generation; Quantum dots; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382463
