Title :
Role of Device Structure on the Performance of Quantum Dot Lasers
Author :
Naidu, D.S. ; Mexis, M. ; Sobiesierski, A. ; Smowton, P.M. ; Summers, H.D. ; Mowbray, D.J. ; Liu, H.Y. ; Hopkinson, M.
Author_Institution :
Cardiff Univ., Cardiff
Abstract :
Measurements of the confinement factor, internal loss, diffusion length and sidewall recombination, using special test structures and a new measurement method, explain the large differences in threshold current density of broad area and ridge lasers of different width.
Keywords :
current density; quantum dot lasers; confinement factor; device structure; diffusion length; internal loss; quantum dot lasers; sidewall recombination; Etching; Laser modes; Loss measurement; Optical devices; Optical losses; Optical materials; Optical waveguides; Quantum dot lasers; Quantum well lasers; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382465
